
HiPerFET TM Power MOSFETs
ISOPLUS247 TM
(Electrically Isolated Back Surface)
IXFR 21N100Q
V DSS
I D25
R DS(on)
= 1000 V
= 18 A
= 0.50 ?
N-Channel Enhancement Mode, Low Q g,
High dv/dt, Low t rr , HDMOS TM Family
t rr ≤ 250 ns
Symbol
Test Conditions
Maximum Ratings
ISOPLUS 247 TM
E153432
V DSS
V DGR
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C; R GS = 1 M ?
1000
1000
V
V
V GS
V GSM
Continuous
Transient
± 20
± 30
V
V
Isolated backside*
I D25
I DM
I AR
T C = 25 ° C
T C = 25 ° C, Note 1
T C = 25 ° C
18
84
21
A
A
A
G = Gate
S = Source
D = Drain
E AR
E AS
dv/dt
P D
T J
T JM
T stg
T L
T C = 25 ° C
T C = 25 ° C
I S ≤ I DM , di/dt ≤ 100 A/ μ s, V DD ≤ V DSS
T J ≤ 150 ° C, R G = 2 ?
T C = 25 ° C
1.6 mm (0.063 in.) from case for 10 s
60
2.5
10
350
-55 ... +150
150
-55 ... +150
300
mJ
J
V/ns
W
° C
° C
° C
° C
* Patent pending
Features
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
IXYS advanced low Q g process
Low gate charge and capacitances
- easier to drive
-faster switching
V ISOL
Weight
50/60 Hz, RMS
t = 1 min
2500
5
V~
g
Low drain to tab capacitance(<30pF)
Low R DS (on) HDMOS TM process
Rugged polysilicon gate cell structure
Rated for Unclamped Inductive Load
Switching (UIS)
Fast intrinsic Rectifier
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
min. typ. max.
Applications
DC-DC converters
Battery chargers
V DSS
V GS(th)
I GSS
I DSS
R DS(on)
V GS = 0 V, I D = 1mA
V DS = V GS , I D = 4mA
V GS = ± 20 V, V DS = 0
V DS = V DSS
V GS = 0 V
V GS = 10 V, I D = I T
Notes 2, 3
T J = 125 ° C
1000
3
V
5 V
± 100 nA
100 μ A
2 mA
0.5 ?
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
Advantages
Easy assembly
Space savings
High power density
? 2003 IXYS All rights reserved
DS98723B(01/03)